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mm1z2v0~mm1z75 silicon planar zener diodes features ? total power dissipation: max. 500 mw ? small plastic package suitable for surface mounted design ? tolerance approximately 5% absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 340 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-123 and symbol 1 2 pinning 1 pin cathode description 1 date:2011/05 www.htsemi.com semiconductor jinyu
characteristics at t a = 25 o c zener voltage range 1) dynamic impedance 2) reverse leakage current l zt for v zt z zt (max.) at i z i r (max.) at v r type marking code v znom v ma v ? ma a v mm1z2v0 4a 2.0 5 1.8...2.15 100 5 120 0.5 mm1z2v2 4b 2.2 5 2.08...2.33 100 5 120 0.7 mm1z2v4 4c 2.4 5 2.28...2.56 100 5 120 1 mm1z2v7 4d 2.7 5 2.5...2.9 110 5 120 1 mm1z3v0 4e 3.0 5 2.8...3.2 120 5 50 1 mm1z3v3 4f 3.3 5 3.1...3.5 130 5 20 1 mm1z3v6 4h 3.6 5 3.4...3.8 130 5 10 1 mm1z3v9 4j 3.9 5 3.7...4.1 130 5 5 1 mm1z4v3 4k 4.3 5 4...4.6 130 5 5 1 mm1z4v7 4m 4.7 5 4.4...5 130 5 2 1 mm1z5v1 4n 5.1 5 4.8...5.4 130 5 2 1.5 mm1z5v6 4p 5.6 5 5.2...6 80 5 1 2.5 mm1z6v2 4r 6.2 5 5.8...6.6 50 5 1 3 mm1z6v8 4x 6.8 5 6.4...7.2 30 5 0.5 3.5 mm1z7v5 4y 7.5 5 7...7.9 30 5 0.5 4 mm1z8v2 4z 8.2 5 7.7...8.7 30 5 0.5 5 mm1z9v1 5a 9.1 5 8.5...9.6 30 5 0.5 6 mm1z10 5b 10 5 9.4...10.6 30 5 0.1 7 mm1z11 5c 11 5 10.4...11.6 30 5 0.1 8 mm1z12 5d 12 5 11.4...12.7 35 5 0.1 9 mm1z13 5e 13 5 12.4...14.1 35 5 0.1 10 mm1z15 5f 15 5 13.8...15.6 40 5 0.1 11 mm1z16 5h 16 5 15.3...17.1 40 5 0.1 12 mm1z18 5j 18 5 16.8...19.1 45 5 0.1 13 MM1Z20 5k 20 5 18.8...21.2 50 5 0.1 15 mm1z22 5m 22 5 20.8...23.3 55 5 0.1 17 mm1z24 5n 24 5 22.8...25.6 60 5 0.1 19 mm1z27 5p 27 5 25.1...28.9 70 2 0.1 21 mm1z30 5r 30 5 28...32 80 2 0.1 23 mm1z33 5x 33 5 31...35 80 2 0.1 25 mm1z36 5y 36 5 34...38 90 2 0.1 27 mm1z39 5z 39 2.5 37...41 100 2 2 30 mm1z43 6a 43 2.5 40...46 130 2 2 33 mm1z47 6b 47 2.5 44...50 150 2 2 36 mm1z51 6c 51 2.5 48...54 180 2 1 39 mm1z56 6d 56 2.5 52...60 180 2 1 43 mm1z62 6e 62 2.5 58...66 200 2 0.2 47 mm1z68 6f 68 2.5 64...72 250 2 0.2 52 mm1z75 6h 75 2.5 70...79 300 2 0.2 57 1) v z is tested with pulses (20 ms). 2) z zt is measured at i z by given a very small a.c. current signal. mm1z2v0~mm1z75 2 date:2011/05 www.htsemi.com semiconductor jinyu
iz 0 0 10 20 vz 30 40 v 8 ma test current iz 5ma 10 20 30 0 breakdown characteristics t j = constant (pulsed) 01 23 test current iz 5ma 10 20 45 7 6 vz tj=25 c o 10 9 v iz 30 40 breakdown characteristics t j = constant (pulsed) tj=25 c 50 ma o 2v7 3v3 3v9 4v7 5v6 6v8 8v2 10 12 15 18 22 27 33 mm1z2v0~mm1z75 3 date:2011/05 www.htsemi.com semiconductor jinyu
package outline plastic surface mounted package; 2 leads sod-123 e mm unit a b c dehv all round d b c a a h h e p p e 1.15 1.05 0.6 0.5 0.135 0.127 2.7 2.6 1.65 1.55 3.9 3.7 0.2 o 5 mm1z2v0~mm1z75 4 date:2011/05 www.htsemi.com semiconductor jinyu

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